A III-V Group Tunnel FETs with Good Switching Characteristics and their Circuit Performance
Journal Title: International Journal of Electronics Communication and Computer Technology - Year 2011, Vol 1, Issue 2
Abstract
This paper explores suitable materials for tunnel FETs (TFETs) which have good switching characteristics. In all device simulations, total body of TFET is made up of group III-V and IV materials are simulated. Proposed InGaSb and InAlSb TFETs have high ION/IOFF ratio and steep subthreshold swing. These TFETs are modeled and used for digital gate simulations. Performance is evaluated on the basis of average delay, dynamic and leakage powers. Silicon (Si) MOSFET whose structure is similar to TFET structure is simulated and modeled. MOSFET digital gates are simulated and their performance is compared with InGaSb and InAlSb TFET gates.
Authors and Affiliations
Bhargav K. Mamilla| Department of Electrical Engineering IIT KanpurKanpur, India mbhargav.404@gmail.com, Rahul Mishra| Department of Electrical Engineering IIT KanpurKanpur, India bahniman@iitk.ac.in, Sooraj Nair| Department of Electrical Engineering IIT Kanpur Kanpur, India, Bahniman Ghosh| Department of Electrical Engineering IIT Kanpur Kanpur, India
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