A III-V Group Tunnel FETs with Good Switching Characteristics and their Circuit Performance
Journal Title: International Journal of Electronics Communication and Computer Technology - Year 2011, Vol 1, Issue 2
Abstract
This paper explores suitable materials for tunnel FETs (TFETs) which have good switching characteristics. In all device simulations, total body of TFET is made up of group III-V and IV materials are simulated. Proposed InGaSb and InAlSb TFETs have high ION/IOFF ratio and steep subthreshold swing. These TFETs are modeled and used for digital gate simulations. Performance is evaluated on the basis of average delay, dynamic and leakage powers. Silicon (Si) MOSFET whose structure is similar to TFET structure is simulated and modeled. MOSFET digital gates are simulated and their performance is compared with InGaSb and InAlSb TFET gates.
Authors and Affiliations
Bhargav K. Mamilla| Department of Electrical Engineering IIT KanpurKanpur, India mbhargav.404@gmail.com, Rahul Mishra| Department of Electrical Engineering IIT KanpurKanpur, India bahniman@iitk.ac.in, Sooraj Nair| Department of Electrical Engineering IIT Kanpur Kanpur, India, Bahniman Ghosh| Department of Electrical Engineering IIT Kanpur Kanpur, India
Keywords
Related Articles
- EP ID EP8268
- DOI -
- Views 573
- Downloads 27
16nm planar process CMOS SRAM cell design: Analysis of Operating Voltage and Temperature Effect
Purpose: CMOS devices are scaling down to nano ranges resulting in increased process variations and short channel effects which not only affect the reliability of the device but also performance expectations. The SRAM de...
Comparative BER Analysis Of Mitigation Of ICI Through SC,ML and EKF Methods In OFDM Systems
OFDM is a multicarrier modulation technique in which a high rate bitstream is split into N parallel bit-streams of lower rate and each of these are modulated using one of N orthogonal sub-carriers. Orthogonal Frequency D...
Detection of Melanoma Skin Diesease using Dermoscopy Images
Melanoma is a type of skin disease and is much more dangerous than the other type of skin cancer. The disease can be cured, when it is diagnosed in its early stage. The early diagnosis is difficult using conventional...
Optimal Quantum Measurement Design on Speech Signal: Blind Minimax Estimator Improving MSE Over LS Estimators
We consider the problem of estimating an unknown, deterministic speech signal parameters based on quantum measurements corrupted by white Gaussian noise. We design and analyze blind minimax estimator (BME), which consist...
Geometric Routing Protocol based on Genetic Algorithm for Minimized Delay in MANETs
Mobile Ad hoc Networks are consisting of mobile nodes having limited radio range and bandwidth without having any fixed infrastructure. Thus to deliver the message from source to destination does not only require to esta...