A study of C(V) characteristics of capacitors containing high-k oxides and high mobility carriers semi-conductors
Journal Title: Journal of New technology and Materials - Year 2015, Vol 5, Issue 1
Abstract
In this work, we proceeded to the analysis of C(V) characteristics of MOS capacitors (Metal-oxide-semi-conductor) with metal gates. Within the framework of the search for new materials, we have studied C(V) characteristics of structures containing high permittivity oxide (high-k)- the HfO2 in our case- to replace the ultra-thin conventional oxide layer (SiO2 ) which reaches its physical and technological limits (less than 1 nm thickness). In these same structures, the stacking of grid is deposited on a substrate with high mobility carriers (electrons and holes). In fact: The germanium (Ge) and III-V materials [1]. The obtained results were largely compared with others simulated and experimental ones. Keywords:
Authors and Affiliations
Amina Merzougui, Saida Latreche, Seloua Bouchekouf
Keywords
Related Articles
- EP ID EP268364
- DOI -
- Views 44
- Downloads 0
Developing heat transfer in a solar air channel with arc-shaped baffles: effect of baffle attack angle
The current study illustrates a computational fluid dynamic analysis of 2D steady-state turbulent forced-convection flow and friction loss characteristics through a constant temperature-surfaced rectangular cross section...
Temperature variation effects in partially depleted SOI n-channel MOSFETs
Silicon-on insulator (SOI) technology has attracted a great attention as a probable alternative candidate for low power, high performances applications. Nowadays electronic is subjected to temperature variations and is,...
Design and simulation of MATLAB / Simulink. Influence of external and internal parameters of photovoltaic cells
This article is devoted to the simulation of a model of a single photovoltaic cell described by mathematical equations comprises a photoelectric generator, a diode, a series resistance and shunt resistance. The goal is t...
Effect of Al doping on the structural and optical properties of SnO2 thin films elaborated by sol-gel technique
In this study, the influence of increasing of the Al concentration on the structural and optical properties of SnO2 thin films were investigated. Pure and aluminum-doped SnO2 thin films were prepared by sol–gel depositio...
Temperatures field calculation in an anisotropic solid through finite elements method, tridimensional case
This calculation is part of numeric thermo-mechanical strains simulation in anisotropic solids. The objective is to apply Fourier’s law for anisotropic materials in tridimensional case. The study domain is a cube with un...