A study of C(V) characteristics of capacitors containing high-k oxides and high mobility carriers semi-conductors
Journal Title: Journal of New technology and Materials - Year 2015, Vol 5, Issue 1
Abstract
In this work, we proceeded to the analysis of C(V) characteristics of MOS capacitors (Metal-oxide-semi-conductor) with metal gates. Within the framework of the search for new materials, we have studied C(V) characteristics of structures containing high permittivity oxide (high-k)- the HfO2 in our case- to replace the ultra-thin conventional oxide layer (SiO2 ) which reaches its physical and technological limits (less than 1 nm thickness). In these same structures, the stacking of grid is deposited on a substrate with high mobility carriers (electrons and holes). In fact: The germanium (Ge) and III-V materials [1]. The obtained results were largely compared with others simulated and experimental ones. Keywords:
Authors and Affiliations
Amina Merzougui, Saida Latreche, Seloua Bouchekouf
Keywords
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