A VLSI Implementation of a New Low Voltage 4th Order Differential Gm-C Band-Pass Filters For Different Approximation In CMOS Technology
Journal Title: Acta Technica Napocensis- Electronica-Telecomunicatii (Electronics and Telecommunications) - Year 2009, Vol 50, Issue 3
Abstract
In this paper we present a new low voltage 4th order differential Gm-C band-pass filter (BPF) for different approximations (Butterworth or Chebyshev), which has been designed in CMOS technology. This differential BPF is composed of two Gm-C biquad structures in cascade connection. The type of band-pass filter approximation (Butterworth or Chebyshev) can be set by an adequate choice of grounded capacitors, using digital command logic. The proposed Gm-C filter architecture is attractive for VLSI implementation and offers the possibility of tuning the centre frequency and the selectivity, using external biasing currents or modifying the grounded capacitor values. The proposed structure provides a ±15% corners variation of the centre frequency, a dynamic range of 200mVpp(diff), distortion THD<1%, and a 10mA current consumption from a 1.8V voltage supply. The simulations performed in 65nm CMOS technology confirm the theoretical results.
Authors and Affiliations
Radu Gabriel BOZOMITU, Vlad CEHAN
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