Α-ZNSE HETEROLAYERS FOR SENSORS
Journal Title: Сенсорна електроніка і мікросистемні технології - Year 2016, Vol 13, Issue 2
Abstract
The optical and luminescent properties of hexagonal α-ZnSe heterolayers, obtained by isovalent substitution for α-CdSe have been investigated. For the first time defined the parameters of the band structure – Δcr = 0,07 еV і Δso = 0,37 еV. It was found that α-ZnSe luminescence is high temperature up to 550 K, determined by the dominant radiation of excitons bounded on Cd isovalent impurity and interband recombination of free charge carriers. The high quantum efficiency η=8-10 % of heterolayers α-ZnSe luminescence allows to use them as a source of stable radiation, as well as sensors that registered the temperature changes.
Authors and Affiliations
M. M. Slyotov, A. M. Slyotov, О. S. Gavaleshko
Keywords
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- EP ID EP397012
- DOI 10.18524/1815-7459.2016.2.73670
- Views 86
- Downloads 0
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