Acoustic-stimulated relaxation of GaAs1–хPх LEDs electroluminescence intensity
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2016, Vol 19, Issue 1
Abstract
The effect of ultrasonic (US) treatment on electroluminescence of initial and irradiated with 2-MeV electrons (Φ = 8.24∙1014 e/cm2) GaAs-GaP LEDs grown on solid solution base was studied. It was found that luminescence intensity of samples previously loaded with US increased during long-term storage (t = 15 h). Passing the current through the diode generates the relaxation process of radiation brightness falling followed by the growth when ultrasound is switched on. The results of calculation of the dislocation density responsible for electroluminescence quenching within the region of electroluminescence degradation are adduced. It was found the ultrasound effect on diodes irradiated with high-energy electrons.
Authors and Affiliations
O. V. Konoreva, M. V. Lytovchenko, Ye. V. Malyi, Ya. M. Olikh, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk
Keywords
Related Articles
- EP ID EP177823
- DOI 10.15407/spqeo19.01.034
- Views 91
- Downloads 0
Effective polycrystalline sensor of ultraviolet radiation
Deposition of special thin layers with high and low resistance in space charge region of surface barrier photoconverters based on the p-Cu1.8S/n-CdS structure leads to a sufficient increase in photosensitivity and decrea...
Condensons and bicondensons in one-dimensional systems
The paper is devoted to simulation of continual strong coupling condensons and bicondensons states in one-dimensional systems by using the Gaussian basis with exponentially correlated multipliers. To determine the accura...
Van der Waals interaction between surface and particle with giant polarizability
We show that a nanoparticle with a “giant” polarizability (i.e., with the polarizability volume significantly exceeding the particle volume) placed in the vicinity of a surface experiences a strongly increased van der Wa...
Electron transport through nanocomposite SiO2(Si) films containing Si nanocrystals
The current transport through insulating SiO2 films with silicon nanocrystals in Si/SiO2(Si)/Al structures has been investigated in the wide range of temperatures (82…350 K). The nanocomposite SiO2(Si) films containing t...
The influence of the guest cavitations loading degree in fractal nanohybrids GaSe<β-cyclodextrin<FeSO4>> on the current passing and polarization processes. The giant “battery spin” effect at room temperature.
The investigation results of clathrate properties GaSeβ-cyclodextrinFeSO4 of the hierarchical architecture with the fourfold expansion at different degrees of a guest cavitations loading have been presented. Based on...