Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2016, Vol 19, Issue 3
Abstract
Simulation of long-time changes in photoluminescence of n-GaAs has been performed, and the mechanism of transformation of the defect structure caused by magnetic field treatments has been represented.
Authors and Affiliations
G. V. Milenin, R. A. Red’ko
Keywords
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- EP ID EP178251
- DOI 10.15407/spqeo19.03.279
- Views 88
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