Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments

Abstract

Simulation of long-time changes in photoluminescence of n-GaAs has been performed, and the mechanism of transformation of the defect structure caused by magnetic field treatments has been represented.

Authors and Affiliations

G. V. Milenin, R. A. Red’ko

Keywords

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  • EP ID EP178251
  • DOI 10.15407/spqeo19.03.279
  • Views 110
  • Downloads 0

How To Cite

G. V. Milenin, R. A. Red’ko (2016). Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments. Semiconductor Physics, Quantum Electronics and Optoelectronics, 19(3), 279-284. https://europub.co.uk/articles/-A-178251