Preparation and study of porous Si surfaces obtained using the electrochemical method

Abstract

Review of original results concerning electrochemical formation of porous Si layers and investigation of properties inherent to the formed layers has been presented. The results related with observation of changes in pores’ morphology depending on the etching conditions, correlation of morphology of the porous layers with their surface composition, photoluminescence and structural characteristics, catalytic activity of porous Si based MIS structures as well as theoretical modeling of the kinetics and mechanisms of the porous Si growth have been described.

Authors and Affiliations

V. G. Lytovchenko, T. I. Gorbanyuk, V. P. Kladko, A. V. Sarikov, N. V. Safriuk, L. L. Fedorenko, S. Ašmontas, J. Gradauskas, E. Širmulis, O. Žalys

Keywords

Related Articles

Integration of LED/SC chips (matrix) in reverse mode with solar energy storage

In this work, for the first time we investigated controlling the quantum efficiencies of III-nitride LED/SC (solar cells) new energy accumulating elements and supercapacitors as energy storage devices (Enestors). It has...

Saturation effect for dependence of the electrical conductivity of planar oriented nematic liquid crystal 6CB on the concentration of Cu7PS6 nanoparticles

The influence of Cu7PS6 nanoparticles with the average size 117 nm on the dielectric properties of planar oriented nematic liquid crystal 6CB has been investigated within the frequency range 101…106 Hz and at the tempera...

Temperature effect on light polarization in uniaxial crystals

It has been shown that changes in temperature of uniaxial single crystal are accompanied by changes in the polarization plane angular position and the light intensity that subsequently passes through the polarizer, uniax...

Variational approach to the calculation of the lowest Wannier exciton state in wide type-II single semiconductor quantum wells

The possibility to change the spatial character of the Wannier exciton ground state in a wide single type-II semiconductor quantum well has been studied variationally. A heterostructure with the central layer forming a p...

Аutomated method for determining the etch pits density on crystallographic planes of large semiconductor crystals

A method for express automatic evaluation of the dislocation density on the crystal surfaces has been developed. The work involves creation of a software that allows automatical determining the number of etch pits with a...

Download PDF file
  • EP ID EP265203
  • DOI 10.15407/spqeo20.04.385
  • Views 61
  • Downloads 0

How To Cite

V. G. Lytovchenko, T. I. Gorbanyuk, V. P. Kladko, A. V. Sarikov, N. V. Safriuk, L. L. Fedorenko, S. Ašmontas, J. Gradauskas, E. Širmulis, O. Žalys (2017). Preparation and study of porous Si surfaces obtained using the electrochemical method. Semiconductor Physics, Quantum Electronics and Optoelectronics, 20(4), 385-395. https://europub.co.uk/articles/-A-265203