Preparation and study of porous Si surfaces obtained using the electrochemical method
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2017, Vol 20, Issue 4
Abstract
Review of original results concerning electrochemical formation of porous Si layers and investigation of properties inherent to the formed layers has been presented. The results related with observation of changes in pores’ morphology depending on the etching conditions, correlation of morphology of the porous layers with their surface composition, photoluminescence and structural characteristics, catalytic activity of porous Si based MIS structures as well as theoretical modeling of the kinetics and mechanisms of the porous Si growth have been described.
Authors and Affiliations
V. G. Lytovchenko, T. I. Gorbanyuk, V. P. Kladko, A. V. Sarikov, N. V. Safriuk, L. L. Fedorenko, S. Ašmontas, J. Gradauskas, E. Širmulis, O. Žalys
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