Integration of LED/SC chips (matrix) in reverse mode with solar energy storage
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2016, Vol 19, Issue 2
Abstract
In this work, for the first time we investigated controlling the quantum efficiencies of III-nitride LED/SC (solar cells) new energy accumulating elements and supercapacitors as energy storage devices (Enestors). It has been shown that the atomic content in these microenergetic devices gives large possibilities for energy storage from solar light. The developed technique is promising to make ideal new functional LED, LD and SC with a high quantum efficiency and small leakage. This technology can be realized using Si/A3B5 integrated processor technology epitaxy with computer driving. Keywords: III-nitrides, rev
Authors and Affiliations
V. I. Osinsky, I. V. Masol, I. Kh. Feldman, A. V. Diagilev, N. O. Sukhovii
Ellipsometry and optical spectroscopy of low-dimensional family TMDs
Here, we report a comprehensive study of fundamental optical properties of two-dimensional materials. These properties have been ascertained using spectroscopic ellipsometry, optical spectroscopy of Raman scattering, and...
Acoustic-stimulated relaxation of GaAs1–хPх LEDs electroluminescence intensity
The effect of ultrasonic (US) treatment on electroluminescence of initial and irradiated with 2-MeV electrons (Φ = 8.24∙1014 e/cm2) GaAs-GaP LEDs grown on solid solution base was studied. It was found that luminescence i...
Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy
The main difficulty in obtaining the lateral elemental composition distribution maps of the semiconductor nanostructures by Scanning Auger Microscopy is the thermal drift of the analyzed area, arising from its local heat...
Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation
Simulation of long-term changes in photoluminescence of n-GaAs after microwave treatment by using the analysis of random events underlying the processes of evolution of the defect structure has been performed. We have sh...
High-frequency electromagnetic radiation of germanium crystals in magnetic fields
The cyclotron radiation of plasma of thermal carriers of germanium crystals, which is not in the state of thermodynamic equilibrium with semiconductor, has been experimentally confirmed.