Some technology aspects for quantum enestor through AIIIBV multicomponent nanoepitaxy
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2017, Vol 20, Issue 2
Abstract
For the first time, it has been considered some quantum enestor technology aspects concerning the integration approach for Si-CMOS and site-controlled InGaN/GaN quantum dots, which provides the possibility to realize single photon sources (SPS)/single photon detector (SPD) for quantum processing based on AIIIBV direct bandgap multicomponent heterogeneous nanostructures and their light energy storing capability, by an analogy with the photosynthetic process in plants.
Authors and Affiliations
V. Osinsky, I. Masol, N. Lyahova, M. Onachenko, A. Osinsky
Keywords
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- EP ID EP217004
- DOI 10.15407/spqeo20.02.254
- Views 74
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