Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (60Co) n-Si crystals
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2018, Vol 21, Issue 1
Abstract
The dose dependence of tensoresistance X /0, which was measured at the symmetrical orientation of the deformation axis (compression) relatively to all isoenergetic ellipsoids both in the initial and in -irradiated samples, was investigated in n-Si crystals. It has been shown that changing the irradiation doses is accompanied by not only quantitative but also qualitative changes in the functional dependence X /0 = f (Х). Features of tensoresistance in n-Si irradiated samples were found depending on three crystallographic directions, along which the samples were cut out and the mechanical stress Х was applied.
Authors and Affiliations
G. P. Gaidar
Keywords
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- EP ID EP415955
- DOI 10.15407/spqeo21.01.048
- Views 57
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