Deposition and optical absorption studies of Cu–As–S thin films
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2018, Vol 21, Issue 2
Abstract
Cu–As–S thin films were deposited using the thermal evaporation technique. Optical transmission spectra of Cu 0.1 As 2.1 S 3.1 thin films were measured within the temperature range 77...300 K. Temperature behaviour of absorption edge inherent to Cu 0.1 As 2.1 S 3.1 thin films was studied. Temperature and compositional dependences of optical parameters in Cu–As–S thin films have been analyzed. It has been revealed that the energy pseudogap decrease and Urbach energy increase with the copper content increase take place in Cu–As–S thin films. The influence of order-disorder processes on optical properties of Cu–As–S thin films has been discussed .
Authors and Affiliations
I. P. Studenyak
Keywords
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- EP ID EP415993
- DOI 10.15407/spqeo21.02.167
- Views 60
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