Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-SnS2
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2018, Vol 21, Issue 4
Abstract
It was performed the systematic investigation of chemical modification regularities of electronic structure at the composition changes of “ideal” 2H-SnS 2 crystal by using the self-consistent density functional theory method in the supercell model. It were analyzed the phases obtained during doping the sulfur sublattice by substitutional impurity Y-S (Y = Cl, I) as well as during changing tin disulfide structure due to the appearance of atomic vacancies in cation and anion sublattices (non-stoichiometry effects).
Authors and Affiliations
D. I. Bletskan
Keywords
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- EP ID EP476416
- DOI 10.15407/spqeo21.04.345
- Views 83
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