Long-term radiation-induced optical darkening effects in chalcogenide glasses
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2016, Vol 19, Issue 4
Abstract
In this work, it is reported that the -irradiated (2.41 MGy accumulated dose) glasses As2S3 (2 mm thick) and Ge15.8As21S63.2 (1 mm thick), both measured 10 years after -irradiation, exhibit radiation-induced optical darkening effect (i.e., long-wave shift of fundamental optical absorption edge). In the case of As2S3 glass, the observed long-term radiation-induced optical darkening effect is well comparable with that reported in literature for -irradiated (3 MGy accumulated dose) glass As2S3 (1.5 mm thick), measured directly after -irradiation. In view of practical application, this finding demonstrates the possibilities for development of innovative chalcogenide glass based long-term dosimeter systems with stable and control parameters. A possible general criterion for mechanisms of long-term radiation-induced structural changes in chalcogenide glasses has been also considered.
Authors and Affiliations
T. S. Kavetskyy
Keywords
Related Articles
- EP ID EP178435
- DOI 10.15407/spqeo19.04.395
- Views 58
- Downloads 0
Electronic structure and optical properties of HgSe
We have performed the density functional theory calculations of mercury selenide compound using the plane-wave pseudo-potential (PWPP) method within the generalized gradient approximation to investigate the electronic st...
Quantitative optical trapping and optical manipulation of micro-sized objects
An optical tweezers technique is used for ultraprecise micromanipulation to measure positions of micrometer scale objects with a precision down to the nanometer scale. It consists of a high performance research microscop...
I127 NQR spectra of Pb1–xCdxI2 and (BiI3)(1–x)(PbI2)x of mixed layered semiconductors
The results of studying the concentration and temperature dependences of NQR spectrum parameters inherent to I127 in mixed layered semiconductors Pbx–1CdxI2 and (BiI3)(1–x)(PbI2)x are presented for x ≤ 0.30 and T = 77…15...
Electronic structure of 2H-SnSe2: ab initio modeling and comparison with experiment
Energy band structure, total and local partial densities of states, spatial distribution of electronic density of 2H-SnSe2 have been calculated using the density functional theory method in LDA and LDA+U approximations b...
Influence of non-radiative exciton recombination in silicon on photoconversion efficiency. 2. Short Shockley–Read–Hall lifetimes
The influence of non-radiative exciton recombination (NRER) on the photoconversion efficiency in silicon solar cells with short Shockley–Read–Hall lifetimes τSRH has been studied. It has been shown that the efficiency re...