ACOUSTOSTIMULATED “QUASI-CAVITATION” OF VACANCY DEFECTS IN SEMICONDUCTORS AT THEIR HIGH-ENERGETIC IRRADIATION
Journal Title: Сенсорна електроніка і мікросистемні технології - Year 2017, Vol 14, Issue 2
Abstract
The article is devoted to the investigation of physical processes in semiconductor structures under the action of high-energy irradiation at Ar +, N + and O + ions implantation at simultaneous acoustic waves irradiation. A number of effects caused by an acoustic field stimulation has been revealed. The explanation to the microstructured transformation of crystal defective – impurity structure from the positions of similarity of processes which occur at cavitation in liquids is given. The term “quasi-cavitation” which by the analogy is physically based on the effect of local high concentration of energy (pressure, temperatures and mechanical stress), which essentially effects on processes in semiconductors at ionic - beam implantation is entered.
Authors and Affiliations
Ya. M. Olikh, Ya. I. Lepikh
Keywords
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- EP ID EP398585
- DOI 10.18524/1815-7459.2017.2.106604
- Views 101
- Downloads 0
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