ADVANCED MEMRISTOR MODEL WITH A MODIFIED BIOLEK WINDOW AND A VOLTAGE-DEPENDENT VARIABLE EXPONENT
Journal Title: Informatyka Automatyka Pomiary w Gospodarce i Ochronie Środowiska - Year 2018, Vol 8, Issue 2
Abstract
The main idea of the present research is to propose a new nonlinear ionic drift memristor model suitable for computer simulations of memristor elements for different voltages. For this purpose, a modified Biolek window function with a voltage-dependent exponent is applied. The proposed modified memristor model is based on Biolek model and due to this and to the use of a voltage-dependent positive integer exponent in the modified Biolek window function it has a new improved property - changing the model nonlinearity extent dependent on the integer exponent in accordance with the memristor voltage. Several computer simulations were made for soft-switching and hard-switching modes and also for pseudo-sinusoidal alternating voltage with an exponentially increasing amplitude and the respective basic important time diagrams, state-flux and i-v relationships are established.<br/><br/>
Authors and Affiliations
Valeri Mladenov, Stoyan Kirilov
Keywords
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- EP ID EP346438
- DOI 10.5604/01.3001.0012.0697
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