Analysis of Defect Subsystem ZnSe, Doped with Transition Metals (Co, Ni)
Journal Title: Фізика і хімія твердого тіла - Year 2015, Vol 16, Issue 4
Abstract
The crystal-quasichemical formulae of doping at the Crystals n-ZnSе:Cо(Ni) аnd p-ZnSе:Cо(Ni) are suggested. The dependence on point defects concentration, on free chargecarrier concentration and Hall concentration of the degree of nonstoichiometry (α, β) are calculated
Authors and Affiliations
L. I. Nykyruy, V. V. Prokopiv, M. P. Levkun, A. V. Lysak
Keywords
Related Articles
- EP ID EP293364
- DOI 10.15330/pcss.16.4.716-721
- Views 44
- Downloads 0
Electrical Parameters of SnO2 Based Varistor Ceramics with CaO and BaO Additions
In the tested SnO2-Co3O4-Nb2O5-Cr2O3-CuO varistor ceramics the adding of CaO or BaO oxides leads to the decrease of the electric conductivity in the low electric field and correlated increase of the potential barrier hei...
Polymorphic Transition of PbO, Initiated by Curing Conditions of Mesocomposites Under Action of Constant Physical Fields
Influence of physical-chemical factors at forming three-dimension network of thermosetting plastic in simulations action of constant physical field upon capable to polymorphic transition crystalline ((form of PbO first s...
Вплив особливостей полімерної матриці на перколяційну поведінку систем на основі поліетерів та вуглецевих нанотрубок
Методами імпедансної спектроскопії були досліджені системи на основі поліетерів та вуглецевих нанотрубок. Встановлено, що кристалічність полімерної матриці значно впливає на електричні та діелектричні характеристики нано...
Physical-Chemical Properties and Crystal-Chemical Doping Mechanisms of ZnSe Crystal by Co, Ni Transition Elements
Based on the analysis of physical and chemical properties there is made the point defect model of the doped by transition metals (Co, Ni) Selenium Zinc crystals. Based on the proposed crystal-quasichemical formulae of th...
Features of Structural, Electrokinetic, and Energy State Characteristics of ZrNiSn1-xGax Solid Solution
Features of structural, kinetic, and energy state characteristics of ZrNiSn1-xGax semiconductive solid solution were investigated in the temperature ranges Т = 80 – 400 K and х = 0 – 0,15. Disorder of crystal structure f...