Analysis of the silicon solar cells efficiency. Type of doping and level optimization
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2016, Vol 19, Issue 1
Abstract
The theoretical analysis of photovoltaic conversion efficiency of highly effective silicon solar cells (SC) has been performed for n-type and p-type bases. Considered here is the case when the Shockley–Read–Hall recombination in the silicon bulk is determined by the deep level of Fe. It has shown that, due to asymmetry of recombination parameters inherent to this level, the photovoltaic conversion efficiency is increased in SC with the n-type base and decreased in SC with the p-type base with the increase in doping. Two approximations for the band-to-band Auger recombination lifetime dependence on the base doping level are considered when performing the analysis. The experimental results are presented for the key characteristics of SC based on a-Si:H–n-Si heterojunctions with intrinsic thin layer (HIT). A comparison between the experimental and calculated values of the HIT cell characteristics has been made. The surface recombination velocity and series resistance are determined from it with a complete coincidence of the experimental and calculated SC parameters’ values. Apart from the key characteristics of SC, surface recombination rate and series resistance were determined from the results of this comparison, in full agreement with the experimental findings.
Authors and Affiliations
A. V. Sachenko, V. P. Kostylyov, M. V. Gerasymenko, R. M. Korkishko, M. R. Kulish, M. I. Slipchenko, I. O. Sokolovskyi, V. V. Chernenko
Keywords
Related Articles
- EP ID EP177841
- DOI 10.15407/spqeo19.01.067
- Views 62
- Downloads 0
Wave equation solution for multilayer planar waveguides in a spatial frequency domain
Possibilities of new numerical method for solving the wave equation of multilayer planar waveguide were investigated. The method is based on the use of Fourier transform to the wave equation and its solution in the frequ...
Electronic structure and optical properties of HgSe
We have performed the density functional theory calculations of mercury selenide compound using the plane-wave pseudo-potential (PWPP) method within the generalized gradient approximation to investigate the electronic st...
Optical studies of as-deposited and annealed Cu7GeS5I thin films
Cu7GeS5I thin films were obtained by non-reactive radio frequency magnetron sputtering onto silicate glass substrates. Optical transmission spectra of as-deposited and annealed Cu7GeS5I thin films were measured in the te...
Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments
We present the experimental and theoretical results of analysis of the optically- induced cyclotron resonance measurements carried out using the charge carriers in silicon (Si) nanostructures at 9 GHz and 4 K. Effective...
Features of electrochemical processes at the boundary p-GaAs–HF water solution
Investigated in this work have been polarization curves typical for the interface p-GaAs–HF water solution with the concentration of fluoric acid between 1 and 10 mass.%. The shape of these curves has been compared with...