CARBON NANO TUBE FIELD EFFECT TRANSISTOR:A REVIEW
Journal Title: International Journal of Engineering Sciences & Research Technology - Year 30, Vol 5, Issue 4
Abstract
Carbon Nano Tube Field Effect Transistor (CNTFET) has various extraordinary electrical and mechanical properties and due to this CNTFET is turning out to be the forefront material for future electronics. In this paper, the review of CNTFETs is presented. MOSFET technology has limited scope for further enhancement. With a motivation to find alternatives, we explore the domain of CNTFETs. The structure, operation and the various performance parameters have been discussed. The effect of threshold voltage, temperature, channel length,delay and power consumption for both CNTFETs and MOSFET devices have been discussed. Previous studies show that CNTFETs are far better than MOSFET device. It is propsed as an alternative to MOSFET because of its promising features. However, challenges faced by CNTFETs have been discussed.
Authors and Affiliations
Neetu Sardana
Keywords
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- EP ID EP128240
- DOI 10.5281/zenodo.50424
- Views 57
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