Circuit Level Performance of FETS: A Comparative Study of Propagation Delay with Half Adder
Journal Title: IOSR Journals (IOSR Journal of Electrical and Electronics Engineering) - Year 2017, Vol 12, Issue 2
Abstract
This paper deals with the propagation delay comparison of half adder with different FETs; such as MOSFET, CNTFET, FINFET. Nanotechnology is the promising field which functions at the molecular level to replace the conventional use of classical CMOS. By simulation, the best part is got that CNTFET shows lesser delay for half adder circuit.
Authors and Affiliations
Maskura Nafreen, Nusrat Ara, Md. Rakib Hasan, MD. Imran Hossain, Fariha Rahman
Keywords
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- EP ID EP387056
- DOI 10.9790/1676-1202021113.
- Views 194
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