Double Stacked Gates MOSFET Technology In both Planar as well as 3D Gate(Finfet) MOSFET’s Journal title: International Journal of Electronics Communication and Computer Technology Authors: Jawaaz Ahmad| Department of Electronics and Communication Islamic University of Science and Technolo... Subject(s): Computer and Information Science, Engineering
Comparison of Driver-Interconnect-Load System with Doped and Neutral Graphene Nano-Ribbon in Nano Scale Regime Journal title: International Journal for Research in Applied Science and Engineering Technology (IJRASET) Authors: Praggya Agnihotry, Shailendra Mishra, R.P. Agarwal Subject(s): Engineering, Applied Linguistics
FinFET- Benefits, Drawbacks and Challenges Journal title: International Journal of Engineering Sciences & Research Technology Authors: Subject(s):
High Performance and Low Leakage 3DSOI Fin-FET SRAM Journal title: American Journal of Engineering and Applied Sciences Authors: D. Sudha, Ch. Santhirani, Rao Ijjada Sreenivasa Subject(s):
3D Simulation of Fin Geometry Influence on Corner Effect in Multifin Dual and Tri-Gate SOI-Finfets. Journal title: International Journal of Nano Studies & Technology (IJNST) Authors: A N Moulai Khatir Subject(s):
Design of Ternary Content-Addressable Memories with Dynamically Power-gated Storage Cells Using FinFETs Journal title: Elektronika Authors: Meng-Chou Chang, Kai-Lun He, Yu-Chieh Wang Subject(s):
Design and Implementation of High-performance Logic Arithmetic Full Adder Circuit based on FinFET 16nm Technology – Shorted Gate Mode
Circuit Level Performance of FETS: A Comparative Study of Propagation Delay with Half Adder Journal title: IOSR Journals (IOSR Journal of Electrical and Electronics Engineering) Authors: Maskura Nafreen, Nusrat Ara, Md.Rakib Hasan, MD.Imran Hossain, Fariha Rahman Subject(s):
Design And Analysis Of Low Power 6t Full Adder With Finfet Technology Journal title: International Journal of Engineering and Science Invention Authors: M.Chandra Sekhar Reddy, Dr. P.Ramana Reddy Subject(s):
Evolution of Apple's “A” Series Processors Journal title: International Journal of engineering Research and Applications Authors: Vinay Nagrani, Mr. Amit S. Hatekar Subject(s):
Ultra low voltage and low power 4-2 compressor using FinFET transistors Journal title: روش های هوشمند در صنعت برق Authors: Amir Baghi Rahin, Vahid Baghi Rahin Subject(s):
Performance Comparison of Electrical Parameter between GaNFinFET and Si-FinFET Nano Devices Journal title: International Journal of Semiconductor Science & Technology (IJSST) Authors: Anindya Shubro Chakroborty, Javed Hossain, S. M. Mostafa Al Mamun, Zahid Hasan Mahmood Subject(s):
A Dynamic Supply Modulator in 18 nm FinFET Node Using Comparator Approach Journal title: International Journal of Experimental Research and Review Authors: Shaina Gangadharan, Ruqaiya Khanam, Veeraiyah Thangasamy Subject(s): Cattle, Dairy processing. Dairy products, Biological Sciences, Chemistry, Computer and Information Science, Mathematics, Miscellaneous, Medical Education
