Computer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BIS
Journal Title: Фізика і хімія твердого тіла - Year 2015, Vol 16, Issue 3
Abstract
Among the semiconductor in latitude use in microelectronics for digital circuits silicon has been and remains the main material. However, today began intensively implemented circuits based on gallium arsenide. Gallium arsenide circuits of the high charge carrier mobility with a frequency range of operation of reach for chips based on silicon (Si).
Authors and Affiliations
S. P. Novosyadlyi, V. S. Huzik
Keywords
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- EP ID EP296725
- DOI 10.15330/pcss.16.3.599-605
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