CONTROLLING MECHANISMS OF SPACE-CHARGE REGION IN COMPOUND FIELD-EFFECT TRANSISTORS
Journal Title: World Journal of Engineering Research and Technology - Year 2018, Vol 4, Issue 3
Abstract
In the compound transistor being investigated, to prevent the failure of the direct-biased transistor, resistors are connected to their gates, the value of which is equal to the resistance of the locked gate. The gate transistor is in the micro mode, that is, its drain current is equal to the gate current of the drain transistor. In this case, the drain transistor operates in the forward bias mode.
Authors and Affiliations
A. V. Karimov
Keywords
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