Crystal-Chemistry of Point Defects and Mechanisms Formation of Solid Solutions CdxZn1-xTe

Journal Title: Фізика і хімія твердого тіла - Year 2015, Vol 16, Issue 4

Abstract

A Crystal-formulas defined dominant point defects in solid solutions CdxZn1-x Te for n-and p-type conductivity output binary compounds ZnS and ZnTe. Dependence of the concentration of defects, free carriers and Hall concentration on the composition of the solid solutions.

Authors and Affiliations

G. Ya. Hurgula, T. P. Vintonyak, O. V. Yaremiychuk

Keywords

Related Articles

Singularities of Polishing Substrates GaAs by Chemo-Dynamical and Non-Contact Chemo-Mechanical Methods

The comparative investigation of two chemical polishing methods as applied to GaAs substrates is carried out. In both cases the equal etchant Br2+HBr was used. The comparison of etching rates and of surface morphology is...

Distribution of Temperature Profiles in Nonstoichiometric SiOx Films by Laser Annealing of the Two Beams

Theoretical study of temperature distribution profiles in nonstoichiometric SiOx films by annealing two laser beams of equal intensity. Temperature distribution on the surface of the films SiOx, irradiated laser beams at...

Hole Conductivity of Thin Layers of Cadmium Telluride with Li and Ca Impurities

Low-temperature annealing of n-CdTe substrates in aqueous suspensions of LiNO3 and Ca(NO3)2 salts created p-conductivity layers. The estimated concentration of free holes in diffusion layers at 300K is (5-50)∙1015 см-3.

Thermoelectric Effect in Nanoribbons of Doped Graphene

The theoretical study of the thermoelectric effect in nanoribbons of doped graphene had been fulfilled for the cases of armchair and zigzag with the relevant electronic states (with a gap and no gap in the energy spectru...

Magneto- and Tensoresistance of the p-Ge Compensated Crystals in the Range of Weak, Intermediate and Classically Strong Magnetic Fields

On the crystalsof compensatedp-Ge (with the compensation factor of k = NSb/NGa = 0,5) the transverse (Н (J // X)) magnetoresistance (within the magnetic fields of 0 < Н 22.3 kE) at fixed values of the mechanical stresses...

Download PDF file
  • EP ID EP293351
  • DOI 10.15330/pcss.16.4.706-710
  • Views 56
  • Downloads 0

How To Cite

G. Ya. Hurgula, T. P. Vintonyak, O. V. Yaremiychuk (2015). Crystal-Chemistry of Point Defects and Mechanisms Formation of Solid Solutions CdxZn1-xTe. Фізика і хімія твердого тіла, 16(4), 706-710. https://europub.co.uk/articles/-A-293351