Magneto- and Tensoresistance of the p-Ge Compensated Crystals in the Range of Weak, Intermediate and Classically Strong Magnetic Fields
Journal Title: Фізика і хімія твердого тіла - Year 2016, Vol 17, Issue 1
Abstract
On the crystalsof compensatedp-Ge (with the compensation factor of k = NSb/NGa = 0,5) the transverse (Н (J // X)) magnetoresistance (within the magnetic fields of 0 < Н 22.3 kE) at fixed values of the mechanical stresses Хі = 0; 0.2; 0.4; 0.6; 0.9; 1.1; 1.5 GPa were measured at 77 K. These mechanical stresses X created the elastic deformation along the samples, the crystallographic orientation of which coincided with the direction of [100]. Also at fixed magnetic field intensities Ні = 2; 4; 8; 10; 15; 20; 22.3 kE the dependencies of resistivity on the mechanical stress X, which coincides with the longitudinal axis of the crystal (X // J // [100]) and changes in the range of 0 £ Х £ 1.5 GPa, were measured. Last dependences characterized by the presence of a minimum in the range of X ~ 0.5 ¸ 0.6 GPa at the minimal magnetic field intensities Н = 2 kOe, which was shifted to the values of X ~ 0.2 ¸ 0.3 GPa with increasing Н up to 22.3 kE.
Authors and Affiliations
G. P. Gaidar
Keywords
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- EP ID EP255262
- DOI 10.15330/pcss.17.1.43-47
- Views 45
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