Dendrite Growth Model at Bonded (001) GaAs Interface
Journal Title: IOSR Journals (IOSR Journal of Electrical and Electronics Engineering) - Year 2017, Vol 12, Issue 1
Abstract
A periodic GaAs wafer-bonded structure was used for nonlinear optical device. Results showed voids present at the bonded GaAs twin boundary. These voids were caused by natural topographical irregularities and surface contamination. Most contamination could be eliminated by sulfur passivation treatments. However, natural irregularities are inevitable. After bonding, two kinds of crystallites were formed at the bonded (001) interfacial voids: diamond-shaped and dendritic geometries. This paper discussed the dendrite growth models within the interfacial void regions.
Authors and Affiliations
Yew Chung Sermon Wu, A. Panimaya Selvi Isabel
Keywords
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- EP ID EP389067
- DOI 10.9790/1676-1201035459.
- Views 121
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