DESIGN AND ANALYSIS OF PERFORATED SI-DIAPHRAGM BASED MEMS PRESSURE SENSOR FOR ENVIRONMENTAL APPLICATIONS

Journal Title: ICTACT Journal on Microelectronics - Year 2016, Vol 2, Issue 1

Abstract

The design is advanced which is an intelligent of calculating the output responses of perforated Si-diaphragm pressure sensor as a behavior of pressure and which compare them to piezoresistive Si-diaphragm. The systematic models based on small and large deflection theories have been applied to conclude the sensitivity and linearity of pressure sensors. The main aim of this paper was to design, simulate and analyze the sensitivity of both perforated and non-perforated Si-diaphragm based MEMS sensor to measure the linearity pressure values. The outer-micro machined diaphragms with square shapes are designed and tested to verify the simulation tool. The Intellisuite MEMS design tool has been used to produce and analyze the pressure sensors with perforated and Piezoresistive Si-Diaphragms. Here the study of sensor incorporating square diaphragm with piezoresistive and perforated Si-diaphragm were achieved and compared to realize the pressure sensitive components. In this perforated Si-diaphragm based pressure sensor has been illustrated to measure pressure range of 0.1MPa to 1Mpa. These simulation results have been formalized by comparing the deflection response estimated with piezoresistive Si-diaphragm model that is originated in this work by suitably modifying the bending of piezoresistive Si-diaphragms taking the perforation into account. Therefore a perforated Si-diaphragm based pressure sensor produced better displacement, sensitivity and stress output responses compared with the other type.

Authors and Affiliations

Nallathambi A, Shanmuganantham T

Keywords

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  • EP ID EP198670
  • DOI 10.21917/ijme.2016.0036
  • Views 123
  • Downloads 0

How To Cite

Nallathambi A, Shanmuganantham T (2016). DESIGN AND ANALYSIS OF PERFORATED SI-DIAPHRAGM BASED MEMS PRESSURE SENSOR FOR ENVIRONMENTAL APPLICATIONS. ICTACT Journal on Microelectronics, 2(1), 209-215. https://europub.co.uk/articles/-A-198670