Design of a Low - Power Switched - Capacitor Bandpass Filter in 0.18?m CMOS Technology with Quality Factor Tunability
Journal Title: International Research Journal of Applied and Basic Sciences - Year 2013, Vol 6, Issue 10
Abstract
In this paper, the design of low - power second - order switched – capacitor bandpass filter is presented in 0.18?m CMOS technology. Instead of two operational amplifiers in conventional structures only one operational amplifier is used to significantly reduce power consumption and chip area. Quality fac tor and maximum gain can be simply tuned by employing low - threshold NMOS transistors as the non - overlapping clock signals with the 1.2 volt amplitude and the period of 1msec to the switches without any variations in the central frequency. With the quality - factor tuning technique the central frequency is 300Hz and the quality factor for the selective values of capacitors is 0.54. The filter has the low power consumption about 0.58nW from a 1.2 supply voltage. In this design the NMOS operational amplifier which has the high gain for the purpose of decreasing gain error consumes 141?m 2 while the total chip area of the proposed circuit is 226?m 2 .
Authors and Affiliations
Mohammad Reza Salehi| Department of Electrical and Electronics Engineering, Shiraz University of Technology PO box 71555-13876, Shiraz, Iran, salehi@sutech.ac.ir, Ebrahim Abiri| Department of Electrical and Electronics Engineering, Shiraz University of Technology, Shiraz, Iran, abiri@sutech.ac.ir, Sanaz Salem| Department of Electrical and Electronics Engineering, Shiraz University of Technology, Shiraz, Iran, s.salem@sutech.ac.ir
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