Determination of band energy levels of α-quaterthiophene (α-4T) thin films from its optical absorption spectrum
Journal Title: IOSR Journal of Applied Physics (IOSR-JAP) - Year 2018, Vol 10, Issue 1
Abstract
α-4T thin film of various thicknesses are prepared by thermal evaporation method. The absorption spectra of the as-deposited and annealed films are recorded using UV-Vis-NIR spectrophotometer. The dependence of absorption coefficient on photon energy has been studied. Optical band energy levels of annealed thin films of various thickness have been estimated. The fundamental optical band energy gap slightly decreases with increase in film thickness. There is no appreciable change in optical band energy levels on annealing.
Authors and Affiliations
Sasidharan V1 ,, 1 Lekshmi Vijayan1 ,, C. M. Joseph2 ,, C. S. Menon3, K. Shreekrishna Kumar1
Keywords
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