Development НЕМТ.
Journal Title: Вісник НТУУ КПІ. Серія Радіотехніка, Радіоапаратобудування - Year 2010, Vol 0, Issue 42
Abstract
This paper provides an overview of recent work and future directions High Electron Mobility Transistor development.
Authors and Affiliations
S. Dyachenko, A. Pavliuchenkova
Keywords
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- EP ID EP309562
- DOI 10.20535/RADAP.2010.42.166-170
- Views 55
- Downloads 0
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