Development НЕМТ.
Journal Title: Вісник НТУУ КПІ. Серія Радіотехніка, Радіоапаратобудування - Year 2010, Vol 0, Issue 42
Abstract
This paper provides an overview of recent work and future directions High Electron Mobility Transistor development.
Authors and Affiliations
S. Dyachenko, A. Pavliuchenkova
Keywords
Related Articles
- EP ID EP309562
- DOI 10.20535/RADAP.2010.42.166-170
- Views 66
- Downloads 0
High-Q spherical dielectric resonator oscillations in the optical and infrared ranges
It’s provided the analysis results for the dielectric Resonators electromagnetic parameters with low permittivity dielectric in the optical and infrared wave-length ranges. The frequencies and Q-factors of the spherical...
Increased noise signal processing in incoherent radar systems
Introduction. The work is devoted to the method of increasing coherence and noise immunity pulse radar systems with incoherent sources probing signals. Problem. Incongruities between a resolution and a range of pulsed ra...
Development of devices and systems of growth of gallium arsenide ingots for micro, nano electronics and photovoltaics
Gallium arsenide is a perspective semiconductor, the need for which is constantly increasing. This is associated with the development of electronic components operating in excess of the high frequency range and developme...
Analysis of linear systems with the usage of multiple transformations with Taylor series
The method for solving the problems of analysis merely compatible signal (archiving, recognition, compression, etc.) and passing this signal through a linear system (for creation a single mathematical tools) with use of...
Unmasking the soil cover's disruption by use of a dynamic model of measurement aerospace parameters of ground vegetation
The "Introduction" describes topicality and importance of revealing the soil cover's disruption for a wide range of fields. It was shown that spectral brightness and colorimetric parameters of ground vegetation can be us...