Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2016, Vol 19, Issue 4
Abstract
The main difficulty in obtaining the lateral elemental composition distribution maps of the semiconductor nanostructures by Scanning Auger Microscopy is the thermal drift of the analyzed area, arising from its local heating with the electron probe and subsequent shift. Therefore, the main goal of the study was the development of the effective thermal drift correction procedure. The measurements were carried out on GeSi/Si nanoislands obtained with molecular beam epitaxy by means of Ge deposition on Si(100) substrate. Use of the thermal drift correction procedure made it possible to get the lateral elemental composition distribution maps of Si and Ge for various types of GeSi/Si nanoislands. The presence of the germanium core and silicon shell in both the dome GeSi/Si nanoislands and pyramid ones was established. In the authors’ opinion, this type of elemental distribution is a result of the completeness of the interdiffusion processes course in the island/wetting layer/substrate system, which play the key role in the nucleation, evolution and growth of GeSi/Si nanoislands. The proposed procedure of the thermal drift correction of the analyzed area allows direct determination of the lateral composition distribution of the GeSi/Si nanoislands with the size of the structural elements down to 10 nm.
Authors and Affiliations
S. S. Ponomaryov, V. O. Yukhymchuk, M. Ya. Valakh
Nanostructure of amorphous films
The paper presents results of experimental and theoretical investigations of thin chalcogenide films at nanostructure level. Transmission electron microscopy demonstrated amorphous cluster structure. The equations for or...
Analysis of a quantum well structure optical integrated device
This paper demonstrates theoretical modeling of a quantum well structure optical integrated device. The constituent devices of the developed structure are a Quantum Well Infrared Photodetector (QWIP) to detect the optica...
New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures
The new experimental data concerning the effect of magnetic field on electric properties of silicon diodes with high doping levels both in the emitter and base (conduction of which at low temperatures is determined by th...
Luminescent properties of fine-dispersed self-propagating high-temperature synthesized ZnS:Cu,Mg
The influence of magnesium impurities on luminescent properties of ZnS:Cu,Mg using obtained by self-propagating high-temperature synthesis (SHS) has been investigated. Special attention was paid to changes of photolumine...
Preparation and study of porous Si surfaces obtained using the electrochemical method
Review of original results concerning electrochemical formation of porous Si layers and investigation of properties inherent to the formed layers has been presented. The results related with observation of changes in p...