On determination of Cd1–xZnxTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2017, Vol 20, Issue 3
Abstract
The known and obtained in this work dependences of the 4.2, 77 and 295 K peak positions hm of the Cd1–xZnxTe edge emission bands induced by: (a) annihilation of free X and bound on shallow neutral acceptors A0 or shallow neutral donors D0 excitons A0X and D0X and (b) recombination of free and shallow donor bound electrons with free holes on Cd1–xZnxTe composition x (x 0.28) are analyzed in detail. It is shown that the 4.2 K peak position of the A0X induced emission band used for the exact x determination could be related with some problems arising from variety of the 4.2 K hm(A0X) vs. x dependences. As a result of the pointed problem, analysis of the 4.2 K hm(A0X) vs. x dependences permits to find the x value with some inaccuracy (some unknown factors shift the energy position of the A0X bound exciton are responsible for this fact). The noticeable (differing from the expected theoretical ones) differences of the peak positions of emission bands hm induced by radiative annihilation of D0X bound excitons at 295 K, radiative recombination of donor bound electrons D0 with free holes h at 300 K and radiative annihilation of free electrons e and holes at 300 K, i.e. of 295 K hm(D0X), 300 K hm (D0h) and 300 K hm (eh) values, accordingly, vs. x dependences are observed and briefly analyzed.
Authors and Affiliations
K. D. Glinchuk, V. P. Maslov, O. M. Strilchuk, A. B. Lyapina
Keywords
Related Articles
- EP ID EP232784
- DOI 10.15407/spqeo20.03.305
- Views 88
- Downloads 0
Transformation of impurity-defect centers in single crystals CdTe:Cl under the influence of microwaves
Performed in this work are the researches of the influence of microwave irradiation (2.45 GHz, 24 GHz) on spectra of low-temperature (T = 2 K) photoluminescence (PL) in single crystals CdTe:Cl. Transformation of impurity...
Nanocrystalline silicon carbide films for solar cells
Nanocrystalline silicon carbide (nc-SiC) films as protective coating and as solar cell material for a harsh environment, high temperatures, light intensities and radiation, were investigated. p- and n-types 100-mm silico...
Domain structure regularization in monocrystalline barium hexaferrite
Conditions for regular domain structure formation in a monocrystalline barium hexaferrite plate have been studied experimentally. The purpose of the work was to develop a simple and, at the same time, an effective method...
Design and characterization of nanostructured SERS substrates based on gold nanostars
Using the method of chemical synthesis, effective SERS substrates were developed, which were the films of gold nanoparticles possessing the form of stars. The peculiarity of star-shaped nanoparticles is that they could e...
Protective applications of vacuum-deposited perfluoropolymer films
The paper summarizes in brief applications of perfluoropolymer thin films deposited from the gas phase by several different methods, for protection of various materials and devices both at the research stage and already...