Transformation of impurity-defect centers in single crystals CdTe:Cl under the influence of microwaves
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2017, Vol 20, Issue 2
Abstract
Performed in this work are the researches of the influence of microwave irradiation (2.45 GHz, 24 GHz) on spectra of low-temperature (T = 2 K) photoluminescence (PL) in single crystals CdTe:Cl. Transformation of impurity-defect centers in CdTe:Cl responsible for PL within the spectral range 1.3 to 1.5 eV under microwave irradiation was analyzed. The parameter of electron-phonon interaction (Huang–Rhys factor) for the donor-acceptor PL band, which depends on the time of microwave irradiation, has been calculated.
Authors and Affiliations
N. D. Vakhnyak, O. P. Lotsko, S. I. Budzulyak, L. A. Demchyna, D. V. Korbutyak, R. V. Konakova, R. A. Red’ko, O. B. Okhrimenko, N. I. Berezovska
Keywords
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- EP ID EP217003
- DOI 10.15407/spqeo20.02.250
- Views 91
- Downloads 0
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