EFFECT OF SUBSTRATE TEMPERATURE ON STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF AL-DOPED ZINC OXIDE THIN FILMS DEPOSITED BY LAYER-BY-LAYER METHOD AT MAGNETRON SPUTTERING
Journal Title: Сенсорна електроніка і мікросистемні технології - Year 2015, Vol 12, Issue 1
Abstract
Al-doped ZnO (AZO) thin films were deposited by magnetron sputtering layer-by-layer growth method on silicon and glass substrates at different substrate temperatures. The atomic force microscopy analysis shows that AZO films are very flat with average root-mean square roughness 2.3 nm. Energy dispersive X-ray spectroscopy analysis reveals that Al content in AZO films approx. 1 at. %. X-ray diffraction studies have shown that all aluminum doped ZnO films are polycrystalline ones having hexagonal wurtzite structure with c-axis oriented perpendicular to film plane (002). Optical measurements showed that all as-grown films are highly transparent (84%) in the visible region of optical spectrum and have band gap energy within 3.34 - 3.41 eV testifying their good optical quality. The lowest value of electrical resistivity was 1.7×10−2 Ω·cm for AZO film deposited at substrate temperature 350°C.
Authors and Affiliations
M. V. Dranchuk, A. I. Ievtushenko, V. A. Karpyna, O. S. Lytvyn, V. R. Romanyuk, V. M. Tkach, O. Yu. Karpenko, V. I. Popovych, M. G. Dusheyko, G. V. Lashkarev
Keywords
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- EP ID EP398852
- DOI 10.18524/1815-7459.2015.1.104305
- Views 77
- Downloads 0
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