Effect of thermal annealing on electrical and photoelectrical properties of n-InSb
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2017, Vol 20, Issue 1
Abstract
InSb wafers of n-type conductivity were annealed at 300, 370 and 400 °C for 30 min in an open tube system under flowing argon ambient. The conductivity type conversion are revealed for the first time in samples with the electron concentration ~1.0•1014 cm–3 for all annealing temperatures. Experimental evidences have been obtained that this phenomenon has a bulk character. In annealed samples the spectral response exhibits pronounced increase in the short-wave region. The effect of annealing on electrical and photoelectrical properties of n-InSb has been explained by formation of InSb antisites.
Authors and Affiliations
S. V. Stariy, A. V. Sukach, V. V. Tetyorkin, V. O. Yukhymchuk, T. R. Stara
Keywords
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- EP ID EP179324
- DOI 10.15407/spqeo20.01.105
- Views 73
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