Effect of thermal annealing on electrical and photoelectrical properties of n-InSb

Abstract

InSb wafers of n-type conductivity were annealed at 300, 370 and 400 °C for 30 min in an open tube system under flowing argon ambient. The conductivity type conversion are revealed for the first time in samples with the electron concentration ~1.0•1014 cm–3 for all annealing temperatures. Experimental evidences have been obtained that this phenomenon has a bulk character. In annealed samples the spectral response exhibits pronounced increase in the short-wave region. The effect of annealing on electrical and photoelectrical properties of n-InSb has been explained by formation of InSb antisites.

Authors and Affiliations

S. V. Stariy, A. V. Sukach, V. V. Tetyorkin, V. O. Yukhymchuk, T. R. Stara

Keywords

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  • EP ID EP179324
  • DOI 10.15407/spqeo20.01.105
  • Views 72
  • Downloads 0

How To Cite

S. V. Stariy, A. V. Sukach, V. V. Tetyorkin, V. O. Yukhymchuk, T. R. Stara (2017). Effect of thermal annealing on electrical and photoelectrical properties of n-InSb. Semiconductor Physics, Quantum Electronics and Optoelectronics, 20(1), 105-109. https://europub.co.uk/articles/-A-179324