Self-organization in irradiated semiconductor crystals caused by thermal annealing
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2018, Vol 21, Issue 2
Abstract
Annealing of complex semiconductors GaP and CdP 2 , irradiated at room temperature by high fluences of electrons within 1…30 MeV energy interval and 80 MeV α -particles, was carried out and main electrical parameters (conductivity σ, carrier concentration n and mobility µ) as well as the positron life-time τ were studied and analyzed. When the point defect concentration excesses some critical value, defects of new kind are formed: oscillation peaks in the isochronous annealing curve appear, and defects with a high cross-section of defect scattering and capture are created. High temperature annealing of the irradiated sample with increased vacancy concentration causes appearance of the vacancy voids with a lower electron density.
Authors and Affiliations
M. ZAVADA
Keywords
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- EP ID EP415982
- DOI 10.15407/spqeo21.02.130
- Views 68
- Downloads 0
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