Modeling of ionizing radiation effect on static and dynamic behavior of vertical cavity surface emitting lasers
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2017, Vol 20, Issue 4
Abstract
In this work, the effect of ionizing radiation on static and dynamic behavior of Vertical Cavity Surface Emitting Laser (VCSEL) was investigated numerically. First, the model of dynamic behavior before irradiation has been analyzed based on Convolution Theorem. Second, all interesting ionizing radiation sensitive factors are compared with their corresponding post irradiation factors. The convolution theorem is applied to get features of dynamic behavior. All interesting parameters have been outlined. The effect of resonance frequency and damping parameters have been studied. The results show that static and dynamic response of these devices are dramatically deteriorated due to irradiation flux. The device gradually changes its mode of operation from lasing mode to LED mode by exhibiting weak oscillation of the output and fast damping with the increase of ionizing radiation. This type of model can be used for high data bit rate in multimode optical fiber network.
Authors and Affiliations
Sh. M. Eladl, K. A. Sharshar
Keywords
Related Articles
- EP ID EP265330
- DOI 10.15407/spqeo20.04.442
- Views 101
- Downloads 0
Polyvinylcarbazole films: Applications for chemical sensors
The adsorption properties of polyvinylcarbazole (PVC) films as sensitive layers of quartz crystal microbalance (QCM) sensors have been studied. Different organic vapors and complex mixture (a cologne) were tested as anal...
Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization
Transport theory for modeling the electric characteristics of high-quality p-n diodes has been developed. This theory takes into account a non-uniform profile of p- doping, finite thickness of the quasi-neutral regions a...
Effective polycrystalline sensor of ultraviolet radiation
Deposition of special thin layers with high and low resistance in space charge region of surface barrier photoconverters based on the p-Cu1.8S/n-CdS structure leads to a sufficient increase in photosensitivity and decrea...
Temperature effect on light polarization in uniaxial crystals
It has been shown that changes in temperature of uniaxial single crystal are accompanied by changes in the polarization plane angular position and the light intensity that subsequently passes through the polarizer, uniax...
Clusters of nickel atoms and controlling their state in silicon lattice
The paper reports that using IR-spectroscopy technique, it has been revealed that nickel atoms in the silicon lattice are gathered in clusters, i.e., the phenomenon of self- assembly takes place. The concentration and di...