Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2018, Vol 21, Issue 3
Abstract
Transport theory for modeling the electric characteristics of high-quality p-n diodes has been developed. This theory takes into account a non-uniform profile of p- doping, finite thickness of the quasi-neutral regions and possible non-uniformity of the bulk recombination coefficient. The theory is based on related solutions of the Poisson equation, drift-diffusion equation and continuity equation with a generation-recombination term taking into account the simple band-to-band generation/recombination model. We have ascertained that the non-uniform profile of p-doping can lead to formation of p-n junctions with a specific two-slope form of the electrostatic barrier and two regions with the high built-in electric fields. We have found that at strong p + -doping the band structure of the InSb p-n junction has the form that can facilitate the emergence of additional mechanisms of current flow due to the tunneling and avalanche effects at the reverse bias. Using the literary data of the electron and hole lifetimes in InSb at cryogenic temperatures, we have found that the coefficient of bulk recombination can have an essential spatial dependence and considerably increases in the space charge region of p-n diode. The theory was applied to our analysis of p-n InSb diodes with p + -doping by using Be-ion implantation performed in ISP NASU. The theory predicts optimal conditions for detection of infrared emission. The technological process of fabrication, processing and testing has been described in details. Theoretically, it has been found that for parameters of the fabricated diodes and at 77 K the dark currents limited by diffusion and generation-recombination mechanisms should be less than 0.1 μA at the inverse bias of the order of 0.1 V. The measured diode’s I-V characteristics were expected to have strong asymmetry, however, dark currents are by one order larger than those predicted by theory. The latter can be associated with a
Authors and Affiliations
V. V. Korotyeyev
Keywords
Related Articles
- EP ID EP416062
- DOI 10.15407/spqeo21.03.294
- Views 62
- Downloads 0
Model research of phonon spectra of argyrodites family
Cu6PS5Br compound belongs to the large family of complex chalcohalides crystallizing in the argyrodite structures. The main peculiarity of the copper-containing argyrodites is high ionic conductivity of Cu+ ions, which m...
Speckle pattern formation in spatially limited optical systems
The dependences of statistical parameters inherent to speckle patterns on the object roughness and aperture size have been investigated. The experimental results that confirm theoretical dependence quality within the lim...
Electronic structure and optical properties of HgSe
We have performed the density functional theory calculations of mercury selenide compound using the plane-wave pseudo-potential (PWPP) method within the generalized gradient approximation to investigate the electronic st...
Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures
The comparative analysis of optical characteristics inherent to Er2O3/SiC and Er2O3/por-SiC/SiC structures has been performed. It has been shown that, regardless the substrate on which the Er2O3 film is formed, an increa...
Dynamical screening function and plasmons in the wide HgTe quantum wells at high temperatures
The dynamical screening function of two-dimensional electron gas in a wide HgTe quantum well (QW) has been numerically modeled in this work. Calculations were performed in the Random Phase Approximation (RPA) framework a...