Features of tensoresistance in single crystals of germanium and silicon with different dopants
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2016, Vol 19, Issue 1
Abstract
Tensoresistance in single crystals of germanium and silicon with different dopants but under practically equal charge carrier concentrations have been investigated. The features of X /0 = f (X) function, which depend on individual physical-chemical properties of dopants, have been discussed in this paper.
Authors and Affiliations
P. I. Baranskii, G. P. Gaidar
Keywords
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- EP ID EP177825
- DOI 10.15407/spqeo19.01.039
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