Features of tensoresistance in single crystals of germanium and silicon with different dopants Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics Authors: P. I. Baranskii, G. P. Gaidar Subject(s):
Magneto- and Tensoresistance of the p-Ge Compensated Crystals in the Range of Weak, Intermediate and Classically Strong Magnetic Fields Journal title: Фізика і хімія твердого тіла Authors: G. P. Gaidar Subject(s):
Тensoresistance of n-Si and n-Ge Multi-Valley Semiconductors Over a Wide Range of Concentrations Journal title: Фізика і хімія твердого тіла Authors: G.P. Gaidar, P.I. Baranskii, V.V. Kolomoets Subject(s):
THE INFLUENCE OF ELECTRON IRRADIATION ON TENSORESISTANCE OF SINGLE CRYSTALS N-GE Journal title: Сенсорна електроніка і мікросистемні технології Authors: S. V. Luniov, A. I. Zimych, M. V. Khvyshchun, V. T. Maslyuk, I. G. Megela Subject(s):
Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (60Co) n-Si crystals Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics Authors: G.P. Gaidar Subject(s):
The The Anisotropy of Electron Scattering in Uniaxially Deformed N-Si Single Crystals with Radiation Defects Journal title: JOURNAL OF ADVANCES IN PHYSICS Authors: Sergiy Valentynovych Luniov, Andriy Zimych, Yulia Udovytska, Olexandr Burban Subject(s):
