Тensoresistance of n-Si and n-Ge Multi-Valley Semiconductors Over a Wide Range of Concentrations
Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 1
Abstract
In this paper, at Т = 77.4 К the tensoresistance of n-Si and n-Ge single crystals over a wide concentration range 101<ne <2 . 1019 cм 3 and the mechanical stresses 0 < Х < 1.5 GPa were studied and some of its features that appear at the breaking point of degeneration of the electron gas in these crystals were discussed. The physical basis of the results obtained was presented.
Authors and Affiliations
G. P. Gaidar, P. I. Baranskii, V. V. Kolomoets
Keywords
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