Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2017, Vol 20, Issue 3
Abstract
We calculated the dependence of effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids on the diameter of the cone base, the side of the pyramid base, the height of cone and pyramid. The numerical calculation shows that n-type polished plate of single crystal silicon and n-type plate of black silicon have a high minority carrier lifetime both in the bulk and on the silicon surface, indicating a high purity of both the bulk of silicon and its surface. However, the measured experimentally effective lifetime of minority carriers in the n-type black silicon is 1.55 ms and is determined by the surface lifetime. The measured effective lifetime of minority charge carriers in the p-type polished silicon is 1.24 ms. The minority carrier lifetime in the bulk of the polished p-type silicon is lower than the surface one.
Authors and Affiliations
V. F. Onyshchenko, L. A. Karachevtseva, O. O. Lytvynenko, M. M. Plakhotnyuk, O. J. Stronska
Keywords
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- EP ID EP232873
- DOI 10.15407/spqeo20.03.325
- Views 61
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