Electrical Conductivity and Magnetoresistance of Silicon Microstructures in The Vicinity to Metal-Insulator Transition
Journal Title: Фізика і хімія твердого тіла - Year 2018, Vol 19, Issue 3
Abstract
Complex research of silicon microcrystals with specific resistance from ρ<sub>300K</sub> = 0.025 Ohm × cm to ρ<sub>300K</sub> =0.007 Ohm × cm doped with boron transport impurity to concentrations corresponding to the transition of metaldielectricand modified transition metal nickel nickel at low temperatures to the temperature of liquefied helium T= 4.2 K in magnetic fields up to 14 Tl. The features of electrophysical characteristics of samples at lowtemperatures in strong magnetic fields up to 14 Tl are determined due to the influence of a magnetic impurity insemiconductor-diluted magnetism and the use of such crystals in sensors of physical quantities (temperature,magnetic field, deformation) is proposed.
Authors and Affiliations
Yu. М. Khoverko, N. О. Shcherban
Keywords
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- EP ID EP498889
- DOI 10.15330/pcss.19.3.246-253
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