Electrical Properties of Cd Doped InSe Crystals

Journal Title: Фізика і хімія твердого тіла - Year 2018, Vol 19, Issue 2

Abstract

The measurements of electrical conductivity along (alternating electric field) and across (direct electric field)the crystallographic C axis of Cd‐doped indium selenide single crystals are carried out. The parameters of thehopping conductivity of InSe <Cd> are calculated.

Authors and Affiliations

V. M. Kaminskii, Z. D. Kovalyuk, V. I. Ivanov, I. G. Tkachyuk, V. V. Netyaga

Keywords

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  • EP ID EP411386
  • DOI 10.15330/pcss.19.2.159-162
  • Views 54
  • Downloads 0

How To Cite

V. M. Kaminskii, Z. D. Kovalyuk, V. I. Ivanov, I. G. Tkachyuk, V. V. Netyaga (2018). Electrical Properties of Cd Doped InSe Crystals. Фізика і хімія твердого тіла, 19(2), 159-162. https://europub.co.uk/articles/-A-411386