Mathematical Modeling of Radiation Defects Implanted of Ions Fluoride in Single Crystals of Gadolinium Gallium Garnet
Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 1
Abstract
Presented the results of mathematical modeling of process of radiation disordering the structure of the surface layer of single crystal gadolinium gallium garnet - implanted by ions of fluorine. Received distributions with depth in the surface layer of energy in elastic and inelastic braking implant in the structure of implanted ions аnd of shifted of ions matrix of structural disordering in the crystal, calculated cascades of atomic collisions with the atoms of the target of the implant and the probability of formation of secondary displacement cascades with different numbers of ions.
Authors and Affiliations
V. M. Pylypiv, V. O. Kotsuybynsky, I. M. Gasyuk, О. Z. Garpul, V. V Kurovec
Keywords
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