My Scientific Contacts with V.E. Lashkarev Pioneer p-n Transition
Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 3
Abstract
V.E. Lashkarev (1903-1973) – famous scientist of Ukraine in semiconductor physics and application of it. The main achievements were obtained on the first researches of the surface by LEED( low-energy electron diffraction ) , the photoelectric properties of the bulk and surface of semiconductors , study of the semiconductor surface thermoelectric effects. Last , in particular,. lead to discovery of the world level result: observation of the p-n junction on base of hetero structure Cu-Cu2O-CuO (published . in Izv.Acad. Sci.USSR ,s.5,#4-5, hh.442-446, 1941). Structure with p-n junction till now is the base for electron device industry.
Authors and Affiliations
V. G. Lytovchenko
Keywords
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