Electrophysical Properties of Indium Doped As2(S, Se)3 thin Films
Journal Title: Фізика і хімія твердого тіла - Year 2016, Vol 17, Issue 4
Abstract
The electrical studies of In-doped thin films based glassy As2S3 and As2Se3, determined the energy of activation, the analysis of photovoltaic memory samples.
Authors and Affiliations
I. V Grytsyshche, V. Yu. Loya, M. I. Kozak, I. I. Chichura, A. M. Solomon, V. M. Krasilinets
Keywords
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- EP ID EP260945
- DOI 10.15330/pcss.17.4.511-514
- Views 86
- Downloads 0
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