Features of the Structural, Energetic and Kinetic Properties HfNi1-xRuxSn Solid Solution
Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 2
Abstract
The crystal and electronic structure, energy and kinetic properties of semiconducting HfNi1-xRuxSn solid solution in the ranges : T = 80÷400 K, ≈ 9,5•1019 см-3 (х = 0,005) ÷ 5,7•1020 см-3 (х = 0,03), was investigated. The nature of the mechanism of generation of structural defects, leading to a change in the band gap and the degree of compensation of the semiconductor and agreement with experimental data.
Authors and Affiliations
V. A. Romaka, P. Rogl, Yu. V. Stadnyk, L. P. Romaka, D. Kaczorowski, R. O. Korzh, V. Ya. Krayovskyy, O. I. Lakh
Keywords
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