Features of the Structural, Energetic and Kinetic Properties HfNi1-xRuxSn Solid Solution
Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 2
Abstract
The crystal and electronic structure, energy and kinetic properties of semiconducting HfNi1-xRuxSn solid solution in the ranges : T = 80÷400 K, ≈ 9,5•1019 см-3 (х = 0,005) ÷ 5,7•1020 см-3 (х = 0,03), was investigated. The nature of the mechanism of generation of structural defects, leading to a change in the band gap and the degree of compensation of the semiconductor and agreement with experimental data.
Authors and Affiliations
V. A. Romaka, P. Rogl, Yu. V. Stadnyk, L. P. Romaka, D. Kaczorowski, R. O. Korzh, V. Ya. Krayovskyy, O. I. Lakh
Keywords
Related Articles
- EP ID EP315930
- DOI -
- Views 48
- Downloads 0
Effect of Filler Nature on Chemical Resistance and Microhardness of Epoxy Composite Films
We investigated the processes of water absorption, chemical stability and microhardness of films of epoxy composites that contained as the polymer matrix the epoxy resin UP-655 and mineral fillers: graphite, mica, alumin...
mproving the Technology Synthesis and Properties of Biodiesel
Existing technologies for the synthesis of active additives to motor fuels are quite complicated. Therefore,improvement of the technology of biodiesel fuel synthesis in order to increase the cetane number and andimprovem...
Features Crystal Structure LaGa - Substituted Epitaxial Films Yttrium Iron Garnet. Determination of Defects
The results of studies conducted in this paper form a complete picture of strains acquired during film growth and further processing. With comprehensive thermodynamic and crystal chemistry analysis evaluated the presence...
Analysis of Defect Subsystem ZnSe, Doped with Transition Metals (Co, Ni)
The crystal-quasichemical formulae of doping at the Crystals n-ZnSе:Cо(Ni) аnd p-ZnSе:Cо(Ni) are suggested. The dependence on point defects concentration, on free chargecarrier concentration and Hall concentration of the...
Features of the Signal System of Automated Design of Frequency Converters Systems - Ultrahigh Frequencies
The article analyzes and outlines the modern principles of the theory of the signaling system of automated design with frequency transformations on a non-reciprocal electronic device - the transistor of ultrahigh frequen...