Electrical properties of InSb p-n junctions prepared by diffusion methods
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2016, Vol 19, Issue 3
Abstract
InSb p-n junctions were prepared by three diffusion methods, including isothermal, two-temperature and two-stage diffusion processes. The current-voltage characteristics were measured as a function of temperature and bias voltage. The highest values of the resistance-area product at zero bias have been obtained for the junctions prepared using the two-stage diffusion process.
Authors and Affiliations
A. V. Sukach, V. V. Tetyorkin, A. I. Tkachuk
Keywords
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- EP ID EP178256
- DOI 10.15407/spqeo19.03.295
- Views 90
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