Electrical properties of InSb p-n junctions prepared by diffusion methods

Abstract

InSb p-n junctions were prepared by three diffusion methods, including isothermal, two-temperature and two-stage diffusion processes. The current-voltage characteristics were measured as a function of temperature and bias voltage. The highest values of the resistance-area product at zero bias have been obtained for the junctions prepared using the two-stage diffusion process.

Authors and Affiliations

A. V. Sukach, V. V. Tetyorkin, A. I. Tkachuk

Keywords

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  • EP ID EP178256
  • DOI 10.15407/spqeo19.03.295
  • Views 56
  • Downloads 0

How To Cite

A. V. Sukach, V. V. Tetyorkin, A. I. Tkachuk (2016). Electrical properties of InSb p-n junctions prepared by diffusion methods. Semiconductor Physics, Quantum Electronics and Optoelectronics, 19(3), 295-298. https://europub.co.uk/articles/-A-178256