Electrical properties of InSb p-n junctions prepared by diffusion methods
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2016, Vol 19, Issue 3
Abstract
InSb p-n junctions were prepared by three diffusion methods, including isothermal, two-temperature and two-stage diffusion processes. The current-voltage characteristics were measured as a function of temperature and bias voltage. The highest values of the resistance-area product at zero bias have been obtained for the junctions prepared using the two-stage diffusion process.
Authors and Affiliations
A. V. Sukach, V. V. Tetyorkin, A. I. Tkachuk
Keywords
Related Articles
- EP ID EP178256
- DOI 10.15407/spqeo19.03.295
- Views 70
- Downloads 0
Physical mechanisms providing formation of ohmic contacts metal-semiconductor. Review
This review is devoted to presentation and analysis of physical mechanisms of ohmic contacts formation in semiconductors. In addition to the classical mechanisms known for decades, new mechanisms for current flow in ohmi...
Electrical and dielectrical properties of composites based on (Ag1–xCux)7GeS5I mixed crystals
Polymer composites were prepared from (Ag 1–x Cu x ) 7 GeS 5 I mixed crystals grown using Bridgman–Stockbarger method. The impedance measurements were performed at room temperature in the frequency range 10 –3 –2·10 6 Hz...
Analysis of the silicon solar cells efficiency. Type of doping and level optimization
The theoretical analysis of photovoltaic conversion efficiency of highly effective silicon solar cells (SC) has been performed for n-type and p-type bases. Considered here is the case when the Shockley–Read–Hall recombin...
Influence of field dependent form of collision integral on kinetic coefficients
The kinetic equation is turned out in the form that contains collision integral obviously dependent on the value of external electric and magnetic fields. The correspondent calculation of kinetic coefficients shows that...
Electrical and optical parameters of Cu6PS5I-based thin films deposited using magnetron sputtering
Cu6PS5I-based thin films were deposited onto silicate glass substrates by non-reactive radio-frequency magnetron sputtering. The chemical composition of thin films was determined using energy-dispersive X-ray spectroscop...