GROWTH, MORPHOLOGICAL, STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF NITROGEN DOPED ZINC OXIDE THIN FILM ON POROUS GALLIUM NITRIDE TEMPLATE
Journal Title: International Journal of Engineering Sciences & Research Technology - Year 0, Vol 5, Issue 2
Abstract
Gallium nitride (GaN) is susceptible of producing efficient display and lighting devices. Low cost hybrid heterostructured lighting devices are developed by combining zinc oxide (ZnO) with GaN that has gained much more research interest, nowadays. Porous GaN receives a great deal of attraction by its excellent and improved properties compared with its bulk counterpart. Several potential applications have been realized, including for serving as a strain-relaxed substrates for the growth of superior quality heteroepitaxial thin films and it is quite interesting. UV assisted photo electrochemical etching nanostructuring technique was utilized for the development of GaN porous structure in this study. Nitrogen is regarded as a good candidate for acceptor doping in zinc oxide by the availability of its gaseous state compared with the other available p-type doping sources. Nitrogen doped ZnO thin film was grown on the resultant porous GaN template using radio frequency magnetron sputtering technique at room temperature. The morphological, structural and optical properties of the fabricated porous nanostructure as well as the grown nitrogen doped ZnO thin films were studied. It was found that the grown nitrogen doped ZnO thin film exhibited p-type conductivity, determined by Hall measurements and the obtained results were presented.
Authors and Affiliations
R. Perumal*
Keywords
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- EP ID EP159241
- DOI 10.5281/zenodo.46541
- Views 67
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