Growth of Cu2ZnSnS4 Thin Films Using Moderate Annealing Temperature and Short Dwell Time

Journal Title: Cumhuriyet Science journal - Year 2019, Vol 40, Issue 3

Abstract

In this study CZTS thin films were fabricated by a two-stage process that sputter deposition of metallic Cu, Zn, and Sn on Mo coated glass substrates and annealing process at 500 °C using various short dwell times (4, 8, and 12 min) using Rapid Thermal Processing (RTP) approach. The X-ray diffraction (XRD), Raman spectroscopy, Scanning Electron Microscopy (SEM), Energy Dispersive X-ray Spectroscopy (EDX), and photoluminescence were employed to characterize the CZTS samples synthesized employing different sulfurization times. It was observed that all CZTS thin films showed Cu-poor and Zn-rich composition according to EDX results. XRD patterns displayed formation of kesterite CZTS and CuS secondary phases. Raman spectra of the films justified formation of kesterite CZTS phase for all CZTS thin films and formation of CTS phase, which is difficult to distinguish by XRD pattern of the films for CZTS-8 and CZTS-12 samples. SEM images of the films displayed dense, void-free, and inhomogeneous surface structure regardless of the sulfurization time. The optical band gap of the films as determined by photoluminescence was found to be about 1.36-1.37 eV.

Authors and Affiliations

Mehmet Ali Olğar, Ayşe Seyhan

Keywords

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  • EP ID EP663166
  • DOI 10.17776/csj.527260
  • Views 65
  • Downloads 0

How To Cite

Mehmet Ali Olğar, Ayşe Seyhan (2019). Growth of Cu2ZnSnS4 Thin Films Using Moderate Annealing Temperature and Short Dwell Time. Cumhuriyet Science journal, 40(3), 554-562. https://europub.co.uk/articles/-A-663166